MICROSEMI二极管1N5711UR-1产品参数
Specifications | ||
TYPE NUMBER | 1N5711UR-1 | |
MINIMUM BREAKDOWN VOLTAGE | V(BR) @ 10 µA/Volts | 70 |
MAXIMUM FORWARD VOLTAGE | VF @ 1 mA/Volts | 0.41 |
MAXIMUM FORWARD VOLTAGE | VF @ IF/V @ mA | 1.0 @ 15 |
WORKING PEAK REVERSE VOLTAGE | VRWM/V (pk) | 50 |
MAXIMUM REVERSE LEAKAGE CURRENT | IR @ V R nA/Volts | 200/50 |
MAXIMUM CAPACITANCE @ V R = 0 VOLTS f = 1.0 MHz | CT/pF | 2 |
MICROSEMI二极管1N5711UR-1产品介绍
肖特基势垒二极管采用冶金结合,可为高可靠性应用提供军用级认证。该小二极管被密封并粘合到DO-213AA玻璃封装中。
This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-213AA glass package.
MICROSEMI二极管1N5711UR-1其他常见型号:
MICROSEMI 1N5711UR-1
MICROSEMI 1N5712UR-1
MICROSEMI 1N6857UR-1
MICROSEMI 1N6858UR-1
MICROSEMI CDLL2810
MICROSEMI CDLL5711
MICROSEMI CDLL5712
MICROSEMI CDLL6263
MICROSEMI CDLL6857
MICROSEMI CDLL6858
MICROSEMI Diode and Rectifier Devices NEW + ORIGINAL+ ONE YEAR WARRANTY
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MICROSEMI二极管1N5711UR-1产品参数